| Citation: |
Zhang Shiyong, Xu Yingqiang, Ren Zhengwei, Niu Zhichuan, Wu Ronghan. Thermal Annealing Induced Structure Change in MBE Grown InGaNAs Alloys for 1.3μm Emission[J]. Journal of Semiconductors, 2005, In Press.
Zhang S Y, Xu Y Q, Ren Z W, Niu Z C, Wu R H. Thermal Annealing Induced Structure Change in MBE Grown InGaNAs Alloys for 1.3μm Emission[J]. Chin. J. Semicond., 2005, 26(13): 36.
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Thermal Annealing Induced Structure Change in MBE Grown InGaNAs Alloys for 1.3μm Emission
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Abstract
A miscibility gap exists in the InGaNAs/GaAs system resulting in spinodal-like decomposition of the alloy;that is,there exists a range of composition and temperatures in which the solid solutions are unstable.During thermal annealing,spinodal decomposition is thermally activated and it is energetically favorable for InGaNAs alloys homogeneously grown by MBE for 1.3μm emission to decompose into In-N- and Ga-As-rich regions according to our theoretical analysis based on the regular solution model-
Keywords:
- InGaNAs
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References
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Proportional views
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