| Citation: |
Chen Weihua, Hu Xiaodong, Zhang Bei, Li Zilan, Pan Yaobo, Hu Chengyu, Wang Qi, Lu Yu, Lu Min, Yang Zhijian, Zhang Guoyi. TEM Analysis on GaN/AlGaN SLS[J]. Journal of Semiconductors, 2005, In Press.
Chen W H, Hu X D, Zhang B, Li Z L, Pan Y B, Hu C Y, Wang Q, Lu Y, Lu M, Yang Z J, Zhang G Y. TEM Analysis on GaN/AlGaN SLS[J]. Chin. J. Semicond., 2005, 26(13): 28.
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TEM Analysis on GaN/AlGaN SLS
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Abstract
120 periods of GaN/Al0.14Ga0.86N superlattice structure (SLS) are grown by metal-organic chemical vapor deposition(MOCVD) on Al2O3(0001) single crystal substrates.The technology of laser lift-off is effectively used to prepare specimens for cross-section TEM.Transmission electron microscopy (TEM) reveals the good quality of undoped AlGaN/GaN SLS,and the periods of crystal lattice as well.Electron diffraction also shows the good quality of AlGaN/GaN SLS.In TEM images we find the assemble phenomenon of Al atoms or Ga atoms.These areas would induce new dislocations if the stress reaches the critical value.Most of the thread dislocations in GaN buffer layer shape like arcs,resulting in epitaxial growth.-
Keywords:
- GaN/AlGaN SLS,
- TEM,
- laser lift-off
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References
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Proportional views
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