Chin. J. Semicond. > 2007, Volume 28 > Issue 9 > 1359-1363

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A Novel Fully-Depleted Dual-Gate MOSFET

Zhang Guohe, Shao Zhibiao, Han Bin and Liu Derui

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Abstract: A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed.The hetero-material gate,which consists of a main gate and two side-gates,is used to control the surface potential distribution.The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately.Compared to a common DG fully depleted SOI MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope.The on/off current ratio is about 1e10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.

Key words: hetero-material gateon/off current ratiosub-threshold slopeSOI FET

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    Received: 18 August 2015 Revised: 14 May 2007 Online: Published: 01 September 2007

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      Zhang Guohe, Shao Zhibiao, Han Bin, Liu Derui. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Journal of Semiconductors, 2007, In Press. Zhang G H, Shao Z B, Han B, Liu D R. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Chin. J. Semicond., 2007, 28(9): 1359.Export: BibTex EndNote
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      Zhang Guohe, Shao Zhibiao, Han Bin, Liu Derui. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Journal of Semiconductors, 2007, In Press.

      Zhang G H, Shao Z B, Han B, Liu D R. A Novel Fully-Depleted Dual-Gate MOSFET[J]. Chin. J. Semicond., 2007, 28(9): 1359.
      Export: BibTex EndNote

      A Novel Fully-Depleted Dual-Gate MOSFET

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-31
      • Revised Date: 2007-05-14
      • Published Date: 2007-08-31

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