Thin-film accumulation-mode SOI pMOSFETs are fabricated and investigated.Their characteristics are compared with those of thin-film inversion-mode pMOSFETs.The subthreshold slope is 69mV/decade,and it almost has no DIBL effect.The breakdown voltage is 10.5V,which is increased by 40% relative to thin-film inversion-mode pMOSFET.The saturation current is 130μA/μm,which is enhanced by 27% compared with inversion-mode pMOSFET.The per-stage propagation delay of 101-stage SOI CMOS ring oscillator is 56ps with 3V supply voltage.