Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 124-130
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热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)

胡靖 , 穆甫臣 , 许铭真 and 谭长华

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Key words: 热载流子效应, p-MOSFET, 退化模型, 电子流量

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 124-130
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      • Received Date: 2015-08-19

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