Chin. J. Semicond. > 2006, Volume 27 > Issue 1 > 174-177

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Direct Tunneling Effect in SiC Schottky Contacts

Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui and Zhang Lin

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Abstract: The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier,which are accurately solved using the one-dimensional time-independent Schrdinger equation.The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation.It also can seamlessly treat thermionic emission and tunneling current

Key words: SiCSchottky contactdirect tunnelingWKB approximation

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui, Zhang Lin. Direct Tunneling Effect in SiC Schottky Contacts[J]. Journal of Semiconductors, 2006, In Press. Tang X Y, Zhang Y M, Zhang Y M, Guo H, Zhang L. Direct Tunneling Effect in SiC Schottky Contacts[J]. Chin. J. Semicond., 2006, 27(1): 174.Export: BibTex EndNote
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      Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui, Zhang Lin. Direct Tunneling Effect in SiC Schottky Contacts[J]. Journal of Semiconductors, 2006, In Press.

      Tang X Y, Zhang Y M, Zhang Y M, Guo H, Zhang L. Direct Tunneling Effect in SiC Schottky Contacts[J]. Chin. J. Semicond., 2006, 27(1): 174.
      Export: BibTex EndNote

      Direct Tunneling Effect in SiC Schottky Contacts

      • Received Date: 2015-08-20

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