Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 179-182

Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor

Liang Xuedong, Liu Zewen, Liu Litian and Li Zhijian

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Abstract: Based on the analysis to the traditional parallel-plate capacitor We present a novel MEMS tunable capacitor with a wide tuning range. Different from the conventional parallel-plate capacitors this capacitor consists of three pairs of plates. One pair of them is used as capacitor plates and the other two are used as controlling plates. AC signal passes through the capacitor plates while DC controlling voltage is applied between the controlling plates. By simulation with Ansys softWare We get the tuning range is up to 214% largely beyond the theoretical tuning range limit ( 50% D of conventional two-parallel-plate capacitors. It can be easily integrated in RF circuits for this simple process of fabrication.

Key words: MEMS voltage-controlled capacitor

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Liang Xuedong, Liu Zewen, Liu Litian, Li Zhijian. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Journal of Semiconductors, 2003, In Press. Liang X D, Liu Z W, Liu L T, Li Z J. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Chin. J. Semicond., 2003, 24(S1): 179.Export: BibTex EndNote
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      Liang Xuedong, Liu Zewen, Liu Litian, Li Zhijian. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Journal of Semiconductors, 2003, In Press.

      Liang X D, Liu Z W, Liu L T, Li Z J. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Chin. J. Semicond., 2003, 24(S1): 179.
      Export: BibTex EndNote

      Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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