Chin. J. Semicond. > 2006, Volume 27 > Issue 4 > 721-724

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Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide

Wu Guibin, Ye Zhizhen, Zhao Xing, Liu Guojun and Zhao Binghui

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Abstract: Poly-SiGe films are prepared using a metal-induced growth technique with an ultrahigh vacuum chemical vapor deposition (UHVCVD) system at low temperatures.The crystal quality and surface morphology of the poly-SiGe films are characterized by XRD and SEM.The influences of various growth parameters on the surface morphology of the poly-SiGe films are investigated.It is shown that when the growth temperature is above 510℃,Ni has a great effect on the poly-SiGe growth.Uniform films are obtained at 10Pa,while densely packed SiGe whiskers are formed when adopting a low-high pressure growth mode

Key words: metal-induced growth UHVCVD heteroepitaxy Ni disilicide

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2006

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      Wu Guibin, Ye Zhizhen, Zhao Xing, Liu Guojun, Zhao Binghui. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Journal of Semiconductors, 2006, In Press. Wu G B, Ye Z Z, Zhao X, Liu G J, Zhao B H. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Chin. J. Semicond., 2006, 27(4): 721.Export: BibTex EndNote
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      Wu Guibin, Ye Zhizhen, Zhao Xing, Liu Guojun, Zhao Binghui. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Journal of Semiconductors, 2006, In Press.

      Wu G B, Ye Z Z, Zhao X, Liu G J, Zhao B H. Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide[J]. Chin. J. Semicond., 2006, 27(4): 721.
      Export: BibTex EndNote

      Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide

      • Received Date: 2015-08-20

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