Chin. J. Semicond. > 2007, Volume 28 > Issue 1 > 69-72

PAPERS

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming and Zheng Youdou

+ Author Affiliations

PDF

Abstract: To enhance the coupling strength between the gate and the quantum dot (QD) confined in the transport channel and improve the gain modulation factor,we develop a novel type of Si single-electron transistor (SET).Clear coulomb blockade oscillations and negative differential conductance (NDC) are observed at room temperature (RT).Based on the model of quantized energy levels of QDs,we analyze the transport mechanism of the fabricated devices,especially the effect of strong gate-dot coupling on the transport characteristics.The results demonstrate that 7.6nm QDs and a large gain modulation factor of 0.84 by controlling the thermal oxidation are achieved.

Key words: single-electron transistorcoulomb blockadecoulomb oscillationsNDC

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2906 Times PDF downloads: 3110 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 27 August 2006 Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming, Zheng Youdou. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Journal of Semiconductors, 2007, In Press. Chen J Z, Shi Y, Pu L, Long S B, Liu M, Zheng Y D. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Chin. J. Semicond., 2007, 28(1): 69.Export: BibTex EndNote
      Citation:
      Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming, Zheng Youdou. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Journal of Semiconductors, 2007, In Press.

      Chen J Z, Shi Y, Pu L, Long S B, Liu M, Zheng Y D. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Chin. J. Semicond., 2007, 28(1): 69.
      Export: BibTex EndNote

      Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-05
      • Revised Date: 2006-08-27
      • Published Date: 2006-12-26

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return