Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 345-349

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Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films

Guo Hengqun, Lin Shangxin and Wang Qiming

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Abstract: nc-Si-SiO2 films are prepared by RF magnetron sputtering technique and thermal annealing.The photoluminescence (PL) spectra at room temperature have 3 luminescent band peaks at 360,430,and 835nm,respectively.The PL mechanism is discussed in combination with absorption measurement,PL excitation,and X-ray diffraction.Passive Q-switched operation of Nd∶YAG lasers is demonstrated with a nc-Si-SiO2 film as a saturable absorber.

Key words: magnetron sputteringnanocrystalline siliconphotoluminescencepassive Q-switching

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Journal of Semiconductors, 2006, In Press. Guo H Q, Lin S X, Wang Q M. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Chin. J. Semicond., 2006, 27(2): 345.Export: BibTex EndNote
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      Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Journal of Semiconductors, 2006, In Press.

      Guo H Q, Lin S X, Wang Q M. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Chin. J. Semicond., 2006, 27(2): 345.
      Export: BibTex EndNote

      Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films

      • Received Date: 2015-08-20

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