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Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer

Zhang Bo, Duan Baoxing and Li Zhaoji

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Abstract: A novel REBULF (reduced bulk field) concept is proposed for the development of a smart power integrated circuit with a thin epitaxy layer,and a new REBULF LDMOS device structure is designed with an n+-floating layer embedded in the high-resistance substrate.The mechanism of the improved breakdown characteristics is that a high electric field around the drain is reduced by a n+-floating layer,which causes the redistribution of the bulk electric field in the drift region,and the substrate supports more biases.The critical condition of the REBULF,which is analyzed and validated by a 2D MEDICI simulator,is that the product of the location of the n+-floating layer and the substrate doping cannot exceed 1E12cm-2. The breakdown voltage of the REBULF LDMOS is 75% greater than that of a RESURF LDMOS.

Key words: LDMOS bulk electric field n+-floating layer breakdown voltage

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2006

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      Zhang Bo, Duan Baoxing, Li Zhaoji. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Journal of Semiconductors, 2006, In Press. Zhang B, Duan B X, Li Z J. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Chin. J. Semicond., 2006, 27(4): 730.Export: BibTex EndNote
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      Zhang Bo, Duan Baoxing, Li Zhaoji. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Journal of Semiconductors, 2006, In Press.

      Zhang B, Duan B X, Li Z J. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Chin. J. Semicond., 2006, 27(4): 730.
      Export: BibTex EndNote

      Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer

      • Received Date: 2015-08-20

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