Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 146-150
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薄栅氧化层击穿特性的实验研究

刘红侠 and 郝跃

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Key words: 击穿, 栅氧化层, 实验, 与时间有关的介质击穿(TDDB)

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 146-150
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      • Received Date: 2015-08-20

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