| Citation: |
Ma Canghai, Liao Guanglan, Shi Tielin, Tang Zirong, Liu Shiyuan, Nie Lei, Lin Xiaohui. Wafer Direct Bonding Based on UV Exposure[J]. Journal of Semiconductors, 2008, In Press.
Ma C H, Liao G L, Shi T L, Tang Z R, Liu S Y, Nie L, Lin X H. Wafer Direct Bonding Based on UV Exposure[J]. J. Semicond., 2008, 29(7): 1369.
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Wafer Direct Bonding Based on UV Exposure
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Abstract
Wafer direct bonding technology has extensive application and broad prospects.UV activation combined with wet chemical cleaning in wafer direct bonding is investigated.An IR detection system,single tensile machine,and FSEM are employed to evaluate the bonding quality.The constant temperature and humility experiment,and the high and low temperature cycle experiment are also performed.It has been demonstrated that this approach can realize wafer direct bonding and enhance the bonding strength.A higher strength can be obtained by controlling the UV exposure time.The bonded wafer treated by constant temperature and humility and high and low temperature cycle can retain a higher bonding strength.Therefore,the process is effective for the wafer direct bonding and has great potential for application.-
Keywords:
- wafer direct bonding,
- UV exposure,
- bonding quality,
- reliability
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References
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Proportional views
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