Chin. J. Semicond. > 1996, Volume 17 > Issue 7 > 522-528
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Si_3N_4绝缘栅中两种表面基对pH－ISFET器件敏感特性的影响

牛蒙年，丁辛芳，童勤义

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(7): 522-528
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      • Received Date: 2015-08-18

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