Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 205-208

Monte Carlo Simulation of tunneling nanoelectronics device

Zhou Jicheng, Long Sirui, He Hongbo and Li Yibing

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Abstract: A simulator based on orthodox theory and Monte Carlo method is depicted. The simulator is suitable for a kind of quantum device-- single electron transistors (SET). It simulates the propagation of electrons through a network consisting of quantum tunnel junctions, capacitors and ideal voltage sources. The simulation of the SET which is comprised of coulomb single island and multi-islands are done using the simulator.

Key words: tunnel unction quantum island Monte-Carlo method computer simulation

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Zhou Jicheng, Long Sirui, He Hongbo, Li Yibing. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Journal of Semiconductors, 2003, In Press. Zhou J C, Long S R, He H B, Li Y B. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Chin. J. Semicond., 2003, 24(S1): 205.Export: BibTex EndNote
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      Zhou Jicheng, Long Sirui, He Hongbo, Li Yibing. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Journal of Semiconductors, 2003, In Press.

      Zhou J C, Long S R, He H B, Li Y B. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Chin. J. Semicond., 2003, 24(S1): 205.
      Export: BibTex EndNote

      Monte Carlo Simulation of tunneling nanoelectronics device

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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