Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 166-170

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New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate

Duan Baoxing, Zhang Bo and Li Zhaoji

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Abstract: A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n+-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic.This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate.The high electric field around the drain is reduced by the n+-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases.The new structure features high breakdown voltage,low on-resistance,and charge balance in the drift region.

Key words: super junctionLDMOSTsubstrate-assisted depletionn+-floating layerbreakdown voltage

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    Received: 18 August 2015 Revised: 16 October 2006 Online: Published: 01 February 2007

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      Duan Baoxing, Zhang Bo, Li Zhaoji. New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate[J]. Journal of Semiconductors, 2007, In Press. Duan B X, Zhang B, Li Z J. New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate[J]. Chin. J. Semicond., 2007, 28(2): 166.Export: BibTex EndNote
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      Duan Baoxing, Zhang Bo, Li Zhaoji. New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate[J]. Journal of Semiconductors, 2007, In Press.

      Duan B X, Zhang B, Li Z J. New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate[J]. Chin. J. Semicond., 2007, 28(2): 166.
      Export: BibTex EndNote

      New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-03
      • Revised Date: 2006-10-16
      • Published Date: 2007-01-30

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