Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 218-220

Fast Epitaxy of 3C-SiC Grown on Si Substrate

Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, Zhao Wanshun, Luo Muchang, Zeng Yiping and Li Jinmin

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Abstract: Fast epitaxy of 3C·SiC grown on substrate Si(100) and Si(111) was carried out by using the vertical low·pressure CVD system.SiC epilayers were characterized by Nomarski microscope and X·ray diffraction.The correlation between growth rate of 3C-SiC and the flow rate of precursors,mechanism of HCl in growth process,and crystallinity and orientation of 3C·SiC epilayers were investigated and discussed.

Key words: 3C·SiCfast epitaxyX-ray diffraction

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, Zhao Wanshun, Luo Muchang, Zeng Yiping, Li Jinmin. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Journal of Semiconductors, 2007, In Press. Li J Y, Zhao Y M, Liu X F, Sun G S, Wang L, Zhao W S, Luo M C, Zeng Y P, Li J M. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 218.Export: BibTex EndNote
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      Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, Zhao Wanshun, Luo Muchang, Zeng Yiping, Li Jinmin. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Journal of Semiconductors, 2007, In Press.

      Li J Y, Zhao Y M, Liu X F, Sun G S, Wang L, Zhao W S, Luo M C, Zeng Y P, Li J M. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 218.
      Export: BibTex EndNote

      Fast Epitaxy of 3C-SiC Grown on Si Substrate

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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