Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 111-114
|

CONTENTS

预先老化对注F nMOS器件辐射可靠性的影响

崔帅 , 余学峰 , 任迪远 , 张华林 and 艾尔肯

+ Author Affiliations

PDF

Abstract: 对注F和未注F CC4007器件在100℃高温老化后的Co60辐照特性进行了研究．研究发现辐照前的高温老化减少了注F器件在辐照中的界面态陷阱电荷的积累，但是普通器件辐照前的高温老化在减少辐照中界面态积累的同时却增加了氧化物电荷的积累，损害了器件的可靠性．可见，栅介质中F离子的引入可以明显提高器件的可靠性．

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2431 Times PDF downloads: 1663 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 111-114
      预先老化对注F nMOS器件辐射可靠性的影响[J]. Journal of Semiconductors, 2005, In Press. 预先老化对注F nMOS器件辐射可靠性的影响[J]. Chin. J. Semicond., 2005, 26(1): 111.Export: BibTex EndNote
      Citation:
      预先老化对注F nMOS器件辐射可靠性的影响[J]. Journal of Semiconductors, 2005, In Press.

      预先老化对注F nMOS器件辐射可靠性的影响[J]. Chin. J. Semicond., 2005, 26(1): 111.
      Export: BibTex EndNote
      shu

      预先老化对注F nMOS器件辐射可靠性的影响

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return