Chin. J. Semicond. > 2007, Volume 28 > Issue 4 > 484-489

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Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor

Wang Cailin and Gao Yong

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Abstract: Based on a short anode GTO structure (SA-GTO),a novel GTO structure called an injection efficiency controlled gate turn off thyristor (IEC-GTO) is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region.The forward blocking,conducting,and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO.The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics.Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized,the process feasibility is analyzed,and a realization scheme is given.The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.

Key words: power semiconductor devicesgate turn-off thyristorinjection efficiency

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    Received: 18 August 2015 Revised: 17 November 2006 Online: Published: 01 April 2007

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      Wang Cailin, Gao Yong. Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor[J]. Journal of Semiconductors, 2007, In Press. Wang C L, Gao Y. Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor[J]. Chin. J. Semicond., 2007, 28(4): 484.Export: BibTex EndNote
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      Wang Cailin, Gao Yong. Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor[J]. Journal of Semiconductors, 2007, In Press.

      Wang C L, Gao Y. Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor[J]. Chin. J. Semicond., 2007, 28(4): 484.
      Export: BibTex EndNote

      Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-28
      • Revised Date: 2006-11-17
      • Published Date: 2007-04-09

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