Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 42-45

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Abstract: 采用直流磁控反应溅射法,在Si(100),Al/Si(100)和Pt/Ti/Si(100)等多种衬底上制备了用于MEMS器件的AlN薄膜.用XRD和AES对薄膜的结构和组分进行了分析,通过优化工艺参数,得到了提高薄膜择优取向的方法,并分析了不同衬底上AlN晶粒生长的有关机理.制备的AlN薄膜显示出良好的〈002〉择优取向性,摇摆曲线的半高宽达到5.6°.

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      硅基AlN薄膜制备技术与测试分析[J]. Journal of Semiconductors, 2005, In Press. 硅基AlN薄膜制备技术与测试分析[J]. Chin. J. Semicond., 2005, 26(1): 42.Export: BibTex EndNote
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      硅基AlN薄膜制备技术与测试分析[J]. Journal of Semiconductors, 2005, In Press.

      硅基AlN薄膜制备技术与测试分析[J]. Chin. J. Semicond., 2005, 26(1): 42.
      Export: BibTex EndNote

      硅基AlN薄膜制备技术与测试分析

      • Received Date: 2015-08-19

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