Chin. J. Semicond. > 2007, Volume 28 > Issue 8 > 1211-1215

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Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane

Xie Bin, Xue Chenyang, Zhang Wendong, Xiong Jijun and Zhang Binzhen

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Abstract: An AlAs/GaAs superlattice quantum well membrane is grown by MBE on (001)-oriented GaAs substrates.A mechanical-electrical coupling experiment on this membrane under (110) and (110) uniaxial pressure is conducted,and the pressure-dependent current-voltage characteristics are tested.Under (110) stress,the resonance peaks shift to more positive voltages,while under (110) stress,the peaks shift toward more negative voltages.The mechanism that induces this phenomenon is discussed.The result agrees well with that of the Meso-piezoresistive theory.

Key words: nano electro-mechanical systemmechanical-electrical coupling uniaxial pressure double-barrier quantum well

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    Received: 18 August 2015 Revised: 12 April 2007 Online: Published: 01 August 2007

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      Xie Bin, Xue Chenyang, Zhang Wendong, Xiong Jijun, Zhang Binzhen. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Journal of Semiconductors, 2007, In Press. Xie B, Xue C Y, Zhang W D, Xiong J J, Zhang B Z. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Chin. J. Semicond., 2007, 28(8): 1211.Export: BibTex EndNote
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      Xie Bin, Xue Chenyang, Zhang Wendong, Xiong Jijun, Zhang Binzhen. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Journal of Semiconductors, 2007, In Press.

      Xie B, Xue C Y, Zhang W D, Xiong J J, Zhang B Z. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Chin. J. Semicond., 2007, 28(8): 1211.
      Export: BibTex EndNote

      Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-14
      • Revised Date: 2007-04-12
      • Published Date: 2007-08-08

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