| Citation: |
Chen Yanhu, Shen Huajun, Wang Xiantai, Chen Gaopeng, Liu Xinyu, Yuan Dongfeng, Wang Zuqiang. An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band[J]. Journal of Semiconductors, 2008, In Press.
Chen Y H, Shen H J, Wang X T, Chen G P, Liu X Y, Yuan D F, Wang Z Q. An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band[J]. J. Semicond., 2008, 29(11): 2098.
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An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band
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Abstract
A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band.A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit.A compact microstripe line parallel matching network is used to divide and combine the power.By biasing the amplifier at class AB:Vcc=7V,Ic=230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8.1GHz.-
Keywords:
- InGaP/GaAs HBT,
- power combining,
- MIC,
- power amplifiers
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References
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Proportional views
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