Chin. J. Semicond. > 2000, Volume 21 > Issue 8 > 754-759
|

CONTENTS

软X射线发射光谱法研究过渡金属硅化物的价电子能带结构

王金良 and 王天民

+ Author Affiliations

PDF

Key words: 软X射线发射光谱法, 锰硅化物, 价电子态密度, Si-L_(2,3)和Si-K_β价带发射谱

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2501 Times PDF downloads: 1212 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 August 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(8): 754-759
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return