Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 260-263
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用氧化多孔硅方法制备厚的SiO_2膜及其微观分析

欧海燕 , 杨沁清 , 雷红兵 , 王红杰 , 余金中 , 王启明 and 胡雄伟

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Key words: 阳极氧化法, 厚二氧化硅, 硅基二氧化硅光波导器件

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 260-263
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      • Received Date: 2015-08-20

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