| Citation: |
Fu Guangsheng, Zhang Jiangyong, Ding Wenge, Lü Xueqin, Yu Wei. Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon[J]. Journal of Semiconductors, 2007, In Press.
Fu G S, Zhang J Y, Ding W G, Lü X, Yu W. Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon[J]. Chin. J. Semicond., 2007, 28(S1): 91.
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Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon
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Abstract
Nano-sized amorphous silicon(a-Si)clusters embedded in silicon nitride(a-SiNx：H)films with different hydrogen dilution ratio were prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique.The luminescence characteristics of the deposited films have been investigated by photoluminescence (PL) and hotoluminescence excitation (PLE) measurements at room temperature.Twe strong PL bands have been observed from every film.The one bule-shifted with the optical band gap increasing is due to recombination of carriers generating in the a-Si clusters，while the other located at about 2.9eV attributes to luminescence from localized state related to silicon nitride matrix surrounding the a-Si clusters.In conjunction with the absorption properties，the influence of the defect and the surface states between a-Si clusters and a-SiNx：H matrix on the interface luminescence of a-Si clusters has been analysed.-
Keywords:
- amorphous silicon,
- PL,
- PLE,
- absorption spectra,
- interface luminescence
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References
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