Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 419-423

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考虑量子力学效应的超薄栅氧nMOSFET's直接隧穿电流二维模型

陈立锋 , 马玉涛 and 田立林

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Key words: MOSFET's, 量子效应, 栅隧穿电流, 器件模型

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      • Received Date: 2015-08-19

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