Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 508-512
|

CONTENTS

p型GaN的掺杂研究

金瑞琴 , 朱建军 , 赵德刚 , 刘建平 , 张纪才 and 杨辉

+ Author Affiliations

PDF

Abstract: 采用正交实验设计方法设计p型GaN的生长，通过较少的实验,优化了影响p型GaN性质的三个生长参数：Mg流量、生长温度和Ⅴ/Ⅲ比．过量的Mg源流量、过高的生长温度、过大的Ⅴ/Ⅲ比都会降低自由空穴浓度．还研究了退火温度对p型GaN的载流子浓度和光学性质的影响．实验结果表明，700～750℃范围为最佳退火温度．

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2659 Times PDF downloads: 2281 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 508-512
      p型GaN的掺杂研究[J]. Journal of Semiconductors, 2005, In Press. p型GaN的掺杂研究[J]. Chin. J. Semicond., 2005, 26(3): 508.Export: BibTex EndNote
      Citation:
      p型GaN的掺杂研究[J]. Journal of Semiconductors, 2005, In Press.

      p型GaN的掺杂研究[J]. Chin. J. Semicond., 2005, 26(3): 508.
      Export: BibTex EndNote
      shu

      p型GaN的掺杂研究

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return