Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 234-237

Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer

Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping and Luo Weijun

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Abstract: GaN films with and without a Al/AIN buffer layers are grown on Si(111) substrate via metalorganic chemical vapor deposition (MOCVD),respectively.The films are characterized by optical microscopy( OM),X-ray diffraction rocking curve (XRDRC),and Raman scattering(RS). OM shows that the GaN film inserting with 8Al/AlN buffer layers has less cracks than film without any δAl/AIN buffer layers.XRDRC demonstrates good quality of the GaN film with δAl/AIN buffer layers and Raman scattering analyses reveal that it is an effective way to overcome the difficulties of growing GaN on Si(111)sub. strate by inserting δAl/AIN buffer layers.

Key words: GaNMOCVDAlNbuffer layers

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping, Luo Weijun. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Journal of Semiconductors, 2007, In Press. Guo L C, Wang X L, Hu G X, Li J P, Luo W J. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Chin. J. Semicond., 2007, 28(S1): 234.Export: BibTex EndNote
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      Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping, Luo Weijun. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Journal of Semiconductors, 2007, In Press.

      Guo L C, Wang X L, Hu G X, Li J P, Luo W J. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Chin. J. Semicond., 2007, 28(S1): 234.
      Export: BibTex EndNote

      Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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