Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 279-281

Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD

Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan and He Haiping

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Abstract: Antimony-doped p-type ZnO thin films were deposited on quartz substrates by pulsed laser deposition.X-ray diffraction shows that the films are highly(002)-oriented.X·ray photoelectron spectroscopy verifies that antimony(Sb)has been doped into ZnOthin films,and the core Sb occupies the Zn site but not the O site.Hall measurement shows that the best p-type ZnO film has a low resistivity of 2.21Ω·cm,a hole concentration of 2.30 x 10^18 cm-3 and a Hall mobility of 1.23cm2/(v·s).

Key words: pulsed laser depositionP·type ZnOantimony。doping

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan, He Haiping. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Journal of Semiconductors, 2007, In Press. Pan X H, Ye Z Z, Zhu L P, Gu X Q, He H P. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Chin. J. Semicond., 2007, 28(S1): 279.Export: BibTex EndNote
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      Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan, He Haiping. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Journal of Semiconductors, 2007, In Press.

      Pan X H, Ye Z Z, Zhu L P, Gu X Q, He H P. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Chin. J. Semicond., 2007, 28(S1): 279.
      Export: BibTex EndNote

      Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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