| Citation: |
Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Liu Jun, Qiao Hui. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. Journal of Semiconductors, 2008, In Press.
Tong Z M, Xue C Y, Zhang B Z, Liu J, Qiao H. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. J. Semicond., 2008, 29(1): 39.
Export: BibTex EndNote
|
RTD’s Relaxation Oscillation Characteristics with Applied Pressure
-
Abstract
The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.The oscillation circuit is simulated and designed by Pspice 8.0,and the measured oscillation frequency is up to 200kHz.Using molecular beam epitaxy (MBE),AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an air-bridge structure.Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure,the relaxation oscillation characteristics have been studied,which show that the relaxation oscillation frequency has approximately a -17.9kHz/MPa change. -
References
-
Proportional views
DownLoad: