Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1130-1134

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不同AlGaN层厚度的AlGaN/GaN高电子迁移率晶体管的静态特性(英文)

吴桐 , 郝智彪 , 唐广 , 郭文平 , 胡卉 , 孙长征 and 罗毅

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Key words: 高电子迁移率晶体管, 氮化镓, 功率器件

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      • Received Date: 2015-08-20

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