| Citation: |
Xu Jingbo, Zhang Haiying, Yin Junjian, Liu Liang, Li Xiao, Ye Tianchun, Li Ming. Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement- and Depletion-Mode PHEMTs[J]. Journal of Semiconductors, 2007, In Press.
Xu J B, Zhang H Y, Yin J J, Liu L, Li X, Ye T C, Li M. Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement- and Depletion-Mode PHEMTs[J]. Chin. J. Semicond., 2007, 28(9): 1424.
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Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement- and Depletion-Mode PHEMTs
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Abstract
The material structure of GaAs-based InGaP/AlGaAs/InGaAs PHEMTs was optimized to obtain the positive threshold voltage of an enhancement-mode PHEMT.Contact-mode photolithography was used for realizing the monolithic integration of 0.8μm gate length GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletion-mode PHEMTs.Excellent DC and high frequency performance are achieved.VT,gm,JDSS,fT,and fmax are 0.1V,330mS/mm,245mA/mm,14.9GHz,and 18GHz for E-mode PHEMTs,and -0.5V,260mS/mm,255mA/mm,14.5GHz,and 20GHz for D-mode PHEMTs,respectively.DCFL inverters based on monolithic integration of GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletion-mode PHEMTs are fabricated.The supply voltage is 1V.When the input voltages are 0.15 and 0.3V,the output voltages are 0.98 and 0.18V, respectively. -
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