Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 472-475
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Lattice-Matched InP-Based HEMTs with fT of 120GHz

Chen Liqiang , Zhang Haiying , Yin Junjian , Qian He and and Niu Jiebin

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Abstract: Lattice-matched InP-based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of －1.2V,and the maximum current density of 500mA/mm.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 472-475
      Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Journal of Semiconductors, 2005, In Press. Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Chin. J. Semicond., 2005, 26(3): 472.Export: BibTex EndNote
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      Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Journal of Semiconductors, 2005, In Press.

      Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Chin. J. Semicond., 2005, 26(3): 472.
      Export: BibTex EndNote
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      Lattice-Matched InP-Based HEMTs with fT of 120GHz

      • Received Date: 2015-08-19

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