Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 115-118

Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy

Gao Yuzhu, Gong Xiuying and Tomuo Yamaguchi

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Abstract: A study of transmission spectra for InAsh Sb,alloy with cutoff wavelength of 8~12pm grown by melt-epitaxy (ME)was performed.The transmission spectra of the epilayers were measured using a FTIR photospectrometer.A calculation of the transmission spectra for InAs1-xSbx alloy was carried out under an assumption of composition microscopic distribution function.A fundamental agreement between experiments and theoretical calculation is obtained,demonstrating energy band gap narrowing of this material.The composition microscopic distribution in-homogeneity may affect the energy band gap structure for IIl·V mixed crystals.

Key words: melt epitaxycutoff wavelengthtransmittance spectrummicroscopic distribution

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Gao Yuzhu, Gong Xiuying, Tomuo Yamaguchi. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Journal of Semiconductors, 2007, In Press. Gao Y Z, Gong X Y, Tomuo Y. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 115.Export: BibTex EndNote
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      Gao Yuzhu, Gong Xiuying, Tomuo Yamaguchi. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Journal of Semiconductors, 2007, In Press.

      Gao Y Z, Gong X Y, Tomuo Y. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 115.
      Export: BibTex EndNote

      Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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