Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 284-288

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Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector

Zhu Huili, Chen Xiaping and Wu Zhengyun

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Abstract: A 4H-SiC avalanche photodetector (APD) with separate absorption and multiplication layers was designed and fabricated.The thicknesses of the absorption and multiplication epilayers were designed as 025 and 1μm,respectively.A multiple junction termination extension (MJTE) was used to eliminate the electric field crowding effect at the edge and to reduce the surface electric field.Dark current,photocurrent,and spectral responsivity were measured.High gain (>1e4) was achieved at a low breakdown voltage,and the dark current was on the order of about 10pA before device was punched through.The ratio of responsivity at 260nm to that at 380nm was higher than 1e3.A new phenomenon was observed in its spectral responsivity.The response wavelength peak shifted to shorter wavelength as the reverse bias was increased.Near breakdown voltage the peak of the response wavelength was located at 210nm,which was shorter than that at 0V.These results show that the samples have good performance for ultraviolet detection.

Key words: 4H-SiCultravioletavalanche photodetector

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    Received: 18 August 2015 Revised: 18 September 2006 Online: Published: 01 February 2007

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      Zhu Huili, Chen Xiaping, Wu Zhengyun. Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector[J]. Journal of Semiconductors, 2007, In Press. Zhu H L, Chen X P, Wu Z Y. Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector[J]. Chin. J. Semicond., 2007, 28(2): 284.Export: BibTex EndNote
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      Zhu Huili, Chen Xiaping, Wu Zhengyun. Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector[J]. Journal of Semiconductors, 2007, In Press.

      Zhu H L, Chen X P, Wu Z Y. Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector[J]. Chin. J. Semicond., 2007, 28(2): 284.
      Export: BibTex EndNote

      Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-26
      • Revised Date: 2006-09-18
      • Published Date: 2007-01-30

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