| Citation: |
Chen Shaowu, Tu Xiaoguang, Yu Hejun, Fan Zhongchao, Xu Xuejun, Yu Jinzhong. Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。[J]. Journal of Semiconductors, 2007, In Press.
Chen S W, Tu X G, Yu H J, Fan Z C, Xu X J, Yu J Z. Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。[J]. Chin. J. Semicond., 2007, 28(S1): 568.
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Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。
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Abstract
This paper deals with several key fabrication techniques for silicon-based nano-photonics devices·including correction of optical proximity effect(OPE)of deep UV lithography and proximity effect of e-beam lithography(EBL).reduction of side wall roughness of silicon nanowire waveguide fabricated by ICP-RIE technique，compactness of silicon dioxide CVD filling for DBR grating grooves and MOS isolation gates.Based on the experimental results，some solutions were proposed and discussed. -
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