| Citation: |
Zhao Guozhong, Zhang Zhenwei, Cui Weili, Zhang Cunlin. THz Emission Spectra Based on Different Compound Semiconductors[J]. Journal of Semiconductors, 2005, In Press.
Zhao G Z, Zhang Z W, Cui W L, Zhang C L. THz Emission Spectra Based on Different Compound Semiconductors[J]. Chin. J. Semicond., 2005, 26(13): 9.
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THz Emission Spectra Based on Different Compound Semiconductors
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Abstract
A THz generation and detection system using the reflection-type THz radiation equipment is presented.The THz emission spectra based on different compound semiconductors are shown.By means of fast Fourier transformation,the frequency domain spectra of THz emission by different semiconductors are obtained from their time domain spectra.THz emission properties of different semiconductors are compared.The results show that the undoped InAs is a kind of more effective THz emission material than those of other studied semiconductors.-
Keywords:
- THz,
- semiconductor,
- electro-optic sampling,
- emission spectra
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References
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