Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 509-516

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半导体硅片的p-n结和铜沉积行为的电化学研究

程璇 and 林昌健

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Key words: 金属污染, 铜沉积, 极化电阻, 硅/溶液界面, p-n结

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2000

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      • Received Date: 2015-08-20

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