Chin. J. Semicond. > 1990, Volume 11 > Issue 12 > 922-930

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异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究

顾聪 , 王德宁 and 王渭源

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1990

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      • Received Date: 2015-08-19

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