| Citation: |
Chen Chunlan, Chen Zhiming, Pu Hongbin, Li Lianbi, Li Jia. Study of ITO Contact to P-SiCGe[J]. Journal of Semiconductors, 2007, In Press.
Chen C L, Chen Z M, Pu H B, Li L B, Li J. Study of ITO Contact to P-SiCGe[J]. Chin. J. Semicond., 2007, 28(S1): 548.
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Study of ITO Contact to P-SiCGe
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Abstract
Indium tin oxide(1TO) thin film was deposited on p-SiCGe and glass substrates by DC magnetic controlled sputtering and contact property of the deposited lTO on p-type SiCGe is investigated as a function of the preparation conditions of p-SiCGe，annealing temperature and annealing time.The results show that the different preparation conditions of p-SiCGe make the ITO contact to p-SiCGe after annealing changed from nonlinear to linear or from linear to nonlinear，and as the thermal annealing temperature increases for a given annealing time，the contact resistance is decreased until the minimum contact resistances are obtained and the further increase of annealing temperature increases the contact resistance.Because it iS related to interfacial reaction and the contact potential barrier height and width during annealing,at annealing temperature of 500℃, the minimum contact resistance is obtained，the highest transmittance of ITO films is 90％，and the sheet resistance is 20.6Ω/□.-
Keywords:
- SiCGe
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References
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Proportional views
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