| Citation: |
Tang Haixia, Wang Qiming. Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands[J]. Journal of Semiconductors, 2006, In Press.
Tang H X, Wang Q M. Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands[J]. Chin. J. Semicond., 2006, 27(12): 2139.
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Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands
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Abstract
The principle of the enhancement of nc-Ge/Si islands by a photonic crystal single-defect cavity is explained.For a photonic crystal slab with a thickness of 300nm,the resonant wavelength of a photonic crystal single-defect cavity based on Ge/Si islands as a function of a and r／a is calculated with the 3D FDTD method and is analyzed theoretically.For fixed r／a and h,the wavelength increases sub-linearly with the increase of lattice constant.For fixed a and h,the wavelength decreases linearly with the increase of r/a.-
Keywords:
- photonic crystal,
- single-defect cavity,
- nc-Ge/Si islands
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References
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