| Citation: |
Liu Yanxiang, Tang Shaoqiu, Xia Guanqun, Cheng Zongquan, Zheng Yanlan. CH3CSNH2/NH4OH Passivation on GaInAsSb/GaSb PIN Infrared Photodetectors[J]. Journal of Semiconductors, 2005, In Press.
Liu Y X, Tang S Q, Xia G Q, Cheng Z Q, Zheng Y L. CH3CSNH2/NH4OH Passivation on GaInAsSb/GaSb PIN Infrared Photodetectors[J]. Chin. J. Semicond., 2005, 26(13): 132.
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CH3CSNH2/NH4OH Passivation on GaInAsSb/GaSb PIN Infrared Photodetectors
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Abstract
A new low-toxicity sulfur passivation method is developed for GaInAsSb compound detector by CH3CSNH2/NH4OH solution.Measurement results show reverse currents decrease greatly and dynamic resistance increase up to 25 times,and the passivation result even better after 83 days of passivation, with the equal ideal result of sulphur passivation.AES and XPS are used to analyze the element density with etching depth.-
Keywords:
- CH3CSNH2/NH4OH,
- GaInAsSb,
- passivation
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References
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