Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 143-146

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Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT

Pu Hongbin and Chen Zhiming

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Abstract: A novel light-activated Darlington heterojuntion transistor power switch which is made of narrow bandgap ternary SiCGe alloys and SiC is proposed in which SiCGe/SiC pn heterojunction is employed to produce a base current by means of optical illumination.By using two-dimensional numerical simulation,performance of the novel light-activated power switch is simulated.It is shown that the light-activated device has very good switching characteristics for a infrared triggering light,and the forward voltage drop is about 4.5V during condition of saturation turn-on,and the switch is well suited for high light power.

Key words: SiClight-activated Darlington transistorheterojuntionpower switch

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Pu Hongbin, Chen Zhiming. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Journal of Semiconductors, 2005, In Press. Pu H B, Chen Z M. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Chin. J. Semicond., 2005, 26(13): 143.Export: BibTex EndNote
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      Pu Hongbin, Chen Zhiming. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Journal of Semiconductors, 2005, In Press.

      Pu H B, Chen Z M. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Chin. J. Semicond., 2005, 26(13): 143.
      Export: BibTex EndNote

      Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT

      • Received Date: 2015-08-19

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