Chin. J. Semicond. > 2006, Volume 27 > Issue 1 > 121-125

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Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices

He Baoping, Zhou Heqin, Guo Hongxia, Zhou Hui, Luo Yinhong, Yao Zhibin and Zhang Fengqi

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Abstract: A method for testing total dose effects is presented for VLSI.The consumption current of the device is measured.Meanwhile,the function parameters of the device and circuit are also measured. The relations between data errors,consumption current and total radiation dose are analyzed.Ionizing radiation experiments are performed on floating gate ROM devices by using 60Co γ-rays as prescribed by this test method.The experimental aim is to examine the radiation response at various dose rates.The parameters and function failure of the devices as function of dose rate are studied.By extrapolation,we predict the failure time of a floating gate ROM device in a space radiation environment

Key words: very large scale integrated circuitstotal dose effectlow dose ratefailure time

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      He Baoping, Zhou Heqin, Guo Hongxia, Zhou Hui, Luo Yinhong, Yao Zhibin, Zhang Fengqi. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Journal of Semiconductors, 2006, In Press. He B P, Zhou H Q, Guo H X, Zhou H, Luo Y H, Yao Z B, Zhang F Q. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Chin. J. Semicond., 2006, 27(1): 121.Export: BibTex EndNote
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      He Baoping, Zhou Heqin, Guo Hongxia, Zhou Hui, Luo Yinhong, Yao Zhibin, Zhang Fengqi. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Journal of Semiconductors, 2006, In Press.

      He B P, Zhou H Q, Guo H X, Zhou H, Luo Y H, Yao Z B, Zhang F Q. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Chin. J. Semicond., 2006, 27(1): 121.
      Export: BibTex EndNote

      Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices

      • Received Date: 2015-08-20

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