Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 567-570

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Abstract: 采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构,研制了宽带偏振不灵敏的半导体光放大器.此放大器在100~250mA的工作电流范围内,获得了大于70nm的3dB光带宽;在0~250mA工作电流和3dB光带宽波长范围内,偏振灵敏度小于1dB.对于1.55μm的信号光,在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      宽带偏振不灵敏InGaAs半导体光放大器[J]. Journal of Semiconductors, 2005, In Press. 宽带偏振不灵敏InGaAs半导体光放大器[J]. Chin. J. Semicond., 2005, 26(3): 567.Export: BibTex EndNote
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      宽带偏振不灵敏InGaAs半导体光放大器[J]. Journal of Semiconductors, 2005, In Press.

      宽带偏振不灵敏InGaAs半导体光放大器[J]. Chin. J. Semicond., 2005, 26(3): 567.
      Export: BibTex EndNote

      宽带偏振不灵敏InGaAs半导体光放大器

      • Received Date: 2015-08-19

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