| Citation: |
Song Yingping, Guo Xia, Ai Weiwei, Zhou Yueping, Shen Guangdi. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Journal of Semiconductors, 2006, In Press.
Song Y P, Guo X, Ai W W, Zhou Y P, Shen G D. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Chin. J. Semicond., 2006, 27(9): 1635.
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Damage Removal in GaN-LEDs by Two-Step Etching Technology
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Abstract
A two-step etching technology is used and the optimized etching parameter is found by experiment to remove etching damage in GaN-LEDs.The PL intensity of the sample etched by ICP with a power of 750W is decreased a little.The thickness of the etch damage layer is less than 25nm.The forward turn-on voltage and reverse leakage current of the LED that was etched by the two-step etching technology are reduced noticeably.The EL intensity is increased,indicating that the leakage current and the rate of nonradiative recombination both decreased.The optical efficiency and device reliability are also improved.-
Keywords:
- two-step etching,
- GaN-LED,
- etch damage,
- PL,
- I-V
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References
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Proportional views
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