A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

Huang Beiju; Chen Hongda; Liu Jinbin; Gu Ming

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Article Navigation > Journal of Semiconductors > 2006 > 27(12): 2089-2093

Huang Beiju, Chen Hongda, Liu Jinbin, Gu Ming. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Journal of Semiconductors, 2006, In Press. Huang B J, Chen H D, Liu J B, Gu M. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Chin. J. Semicond., 2006, 27(12): 2089.Export: BibTex EndNote

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Huang Beiju, Chen Hongda, Liu Jinbin, Gu Ming. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Journal of Semiconductors, 2006, In Press.

Huang B J, Chen H D, Liu J B, Gu M. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Chin. J. Semicond., 2006, 27(12): 2089.

Export: BibTex EndNote

Citation:

Huang Beiju, Chen Hongda, Liu Jinbin, Gu Ming. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Journal of Semiconductors, 2006, In Press.

Huang B J, Chen H D, Liu J B, Gu M. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Chin. J. Semicond., 2006, 27(12): 2089.

Export: BibTex EndNote

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A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Received Date: 2015-08-18
Accepted Date: 2006-04-18
Revised Date: 2006-08-22
Published Date: 2006-12-04

Abstract

Abstract

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the V_πL_π product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
- carrier accumulation,
- plasma dispersion effect,
- electro-optic phase modulator,
- metal-oxide-semiconductor,
- optoelectronic integrated circuit

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