| Citation: |
Lin Tao, Zheng Kai, Wang Cuiluan, Wang Jun, Wang Yonggang, Zhong Li, Feng Xiaoming, Ma Xiaoyu. Fabrication of Practical 1730nm Waveband Laser Diodes with Buried Heterojunction Structures[J]. Journal of Semiconductors, 2006, In Press.
Lin T, Zheng K, Wang C L, Wang J, Wang Y G, Zhong L, Feng X M, Ma X Y. Fabrication of Practical 1730nm Waveband Laser Diodes with Buried Heterojunction Structures[J]. Chin. J. Semicond., 2006, 27(8): 1467.
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Fabrication of Practical 1730nm Waveband Laser Diodes with Buried Heterojunction Structures
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Abstract
1730nm wavelength semiconductor laser diodes(LDs) for use in medical appliances are reported.The LD structure is grown by low-pressure MOCVD,and the active region consists of five periods of InGaAs quantum wells and InGaAsP quantum barriers.The LD has a pnpn-confined buried heterojunction structure,whose ridge width and cavity length are 2μm and 300μm,respectively.After facet coating,the threshold current of the LDs is about 18±5mA at room temperature,and the operating current is about 60±5mA at an output power of 8mW.For the TO-packaged LDs,the output power is over 5mW under a 100mA operating current,and the output wavelengths are 1732±10nm.The results of high-temperature, constant-current accelerated aging show that the LDs are reliable over long operation periods and could have practical applications.-
Keywords:
- MOCVD,
- semiconductor laser diode,
- 1730nm waveband,
- InP
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References
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