Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 268-272

CONTENTS

Analysis Design and Optimization of Si Inductors

Zhang Yueli and Zhang Wenjun

+ Author Affiliations

PDF

Abstract: Si integrated inductors are simulated with the tool ISE-EMLAB which supports FDTD(finite-difference time-domain) method.The effects on the frequency feature of the quality factor,inductance, and resistance brought by the change of the design parameters such as the metal width,metal space,outer diameter, and the number turns are analyzed.Then,we get a principle of design and optimization of the Si integrated inductors.

Key words: FDTDquality factorinductanceresistancedesign parameters

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2685 Times PDF downloads: 1692 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhang Yueli, Zhang Wenjun. Analysis Design and Optimization of Si Inductors[J]. Journal of Semiconductors, 2005, In Press. Zhang Y L, Zhang W J. Analysis Design and Optimization of Si Inductors[J]. Chin. J. Semicond., 2005, 26(13): 268.Export: BibTex EndNote
      Citation:
      Zhang Yueli, Zhang Wenjun. Analysis Design and Optimization of Si Inductors[J]. Journal of Semiconductors, 2005, In Press.

      Zhang Y L, Zhang W J. Analysis Design and Optimization of Si Inductors[J]. Chin. J. Semicond., 2005, 26(13): 268.
      Export: BibTex EndNote

      Analysis Design and Optimization of Si Inductors

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return