Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 367-372
|

CONTENTS

超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)

张贺秋 , 毛凌锋 , 许铭真 and 谭长华

+ Author Affiliations

PDF

Key words: 隧穿电流, 高场应力, 超薄, 应变诱导漏电流

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2043 Times PDF downloads: 1129 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 367-372
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return